u. c/ e.iieli ., fi ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 23A017 1.7 watts, 20 volts, 280 ma class a linear to 2300 mhz general description the 23A017 is a common emitter transistor capable of providing 1.7 watts of class a, rf output power to 2300 mhz. thjs transistor is specifically designed for general class a amplifier applications. it utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. absolute maximum ratings maximum power dissipation @ 25c 6.0 watts maximum voltage and current bvces collector to emitter voltage bvebo emitter to base voltage ic collector current maximum temperatures storage temperature operating junction temperature 50 volts 3.5 volts 800ma - 65 to -f- 200c + 200c case outline 55bt, style 2 electrical characteristics @ 25 c symbol pout pin pg ft vswr characteristics power out power input power gain transition frequency load mismatch tolerance test conditions f = 2.3 ghz ic = 280ma vcc = 20 volts vce = 20v, ic =280 ma min 1.7 6.25 3.4 typ 2.2 7.6 3.7 max .38 9:1 units watts watts db ghz bvebo bvces bvceo hke cob 6jc emitter to base breakdown collector to emitter breakdown collector to emitter breakdown dc current gain capacitance thermal resistance ie = 2ma ic = 20 ma ic = 20 ma vce = 5 v, ic = 200 ma vcb = 28v, f = 1 mhz 3.5 50 22 20 4.8 14 16 volts volts volts pf c/w
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